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Optical constants of Si:InP (Silicon-doped indium phosphide)
Panah et al. 2016: n,k 5.0–30 µm

Wavelength: µm
 (5.00 – 30.00)  
 

Complex refractive index (n+ik)[ i ]


n   k   LogX   LogY   eV

Derived optical constants

Conditions & Spec sheet

n_absolute: true
wavelength_vacuum: true
film_thickness: 400 nm
substrate: InP

Comments

400 nm silicon-doped InP (Si:InP) layer on undoped InP substrate.

References

M. E. A. Panah, O. Takayama, S. V. Morozov, K. E. Kudryavtsev, E. S. Semenova, A. V. Lavrinenko. Highly doped InP as a low loss plasmonic material for mid-IR region, Opt. Express 24, 29077-29088 (2016) (Numerical data kindly provided by Osamu Takayama)

Data

[CSV - comma separated]   [TXT - tab separated]   [Full database record]

INFO

Silicon-doped indium phosphide (Si:InP)

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