Refractive index of ZnSiAs2 (Zinc silicon arsenide)

Optical constants of ZnSiAs₂ (Zinc silicon arsenide)
Boyd et al. 1972: n(e) 0.7–11.5 µm

Wavelength: µm

(0.7–11.5)

Complex refractive index (n+ik)[ i ]

Derived optical constants

Dispersion formula [ i ]

$$n^2-1=3.9091+\frac{5.5565λ^2}{λ^2-0.1578}+\frac{1.1287λ^2}{λ^2-700}$$

Comments

Extraordinary ray(e)

References

1) G. D. Boyd, E. Buehler, F. G Storz, J. H. Wernick. Linear and nonlinear optical properties of ternary A^IIB^IVC₂^V chalcopyrite semiconductors, IEEE J. Quant. Electron., 8, 419-426 (1972)
2) G. C. Bhar. Refractive index interpolation in phase-matching, Appl. Opt. 15, 305-307 (1976)
*Ref. 2 provides a dispersion formula based on data from Ref. 1

Data

[Expressions for n] [CSV - comma separated] [TXT - tab separated] [Full database record]

Optical transmission calculator

Wavelength: µm
Thickness:
Calculation method:

Transmittance[ i ]

T =

LogX LogY eV

Reflection calculator

Wavelength: µm
Angle of incidence (0~90°):
Direction: in out

Reflectance[ i ]

P-polarized

R_P =

S-polarized

R_S =

Non-polarized (Rp+Rs)/2

R =

R_P R_S R LogY

Reflection phase[ i ]

ɸ_P = °
ɸ_S = °

Brewster's angle[ i ]

θ_B = °

Critical angle[ i ] [ i ]

θ_C = °

INFO

Zinc silicon arsenide, ZnSiAs₂

Zinc silicon arsenide (ZnSiAs₂) is a ternary III-V semiconductor compound that crystallizes in the chalcopyrite structure. It has interesting optical and electronic properties that make it a potential candidate for various applications. Due to its semiconducting nature, it has been studied for use in photovoltaic applications and infrared detectors. Its bandgap is suitable for absorbing a significant portion of the solar spectrum, potentially making it useful for solar cells. Additionally, it has been researched for its potential in electronic devices, given its unique combination of elements and the resulting electrical characteristics. While it is not as commonly used or as well-known as some binary compounds, ongoing research continues to explore its potential in optoelectronic applications.

RefractiveIndex.INFO

Optical constants of ZnSiAs₂ (Zinc silicon arsenide)
Boyd et al. 1972: n(e) 0.7–11.5 µm

Complex refractive index (n+ik)[ i ]

Refractive index[ i ]

Extinction coefficient[ i ]

Derived optical constants

Relative permittivity (dielectric constants)[ i ] [ i ]

Absorption coefficient[ i ] [ i ]

Abbe number[ i ]

Chromatic dispersion[ i ]

Group index[ i ] [ i ]

Group velocity dispersion[ i ] [ i ] [ i ]

Dispersion formula [ i ]

Comments

References

Data

Optical transmission calculator

Transmittance[ i ]

Reflection calculator

Reflectance[ i ]

P-polarized

S-polarized

Non-polarized (Rp+Rs)/2

Reflection phase[ i ]

Brewster's angle[ i ]

Critical angle[ i ] [ i ]

INFO

Zinc silicon arsenide, ZnSiAs₂

Optical constants of ZnSiAs2 (Zinc silicon arsenide)Boyd et al. 1972: n(e) 0.7–11.5 µm

Complex refractive index (n+ik)[ i ]

Refractive index[ i ]

Extinction coefficient[ i ]

Derived optical constants

Relative permittivity (dielectric constants)[ i ] [ i ]

Absorption coefficient[ i ] [ i ]

Abbe number[ i ]

Chromatic dispersion[ i ]

Group index[ i ] [ i ]

Group velocity dispersion[ i ] [ i ] [ i ]

Dispersion formula [ i ]

Comments

References

Data

Optical transmission calculator

Transmittance[ i ]

Reflection calculator

Reflectance[ i ]

P-polarized

S-polarized

Non-polarized (Rp+Rs)/2

Reflection phase[ i ]

Brewster's angle[ i ]

Critical angle[ i ] [ i ]

INFO

Zinc silicon arsenide, ZnSiAs2

Optical constants of ZnSiAs₂ (Zinc silicon arsenide)
Boyd et al. 1972: n(e) 0.7–11.5 µm

Zinc silicon arsenide, ZnSiAs₂