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Optical constants of Si3N4, SiN (Silicon nitride)
Kischkat et al. 2012: Non-stoichiometric SiN; n,k 1.54–14.29 µm

Wavelength: µm
 (1.53846–14.28571)  
 

Complex refractive index (n+ik)[ i ]


n   k   LogX   LogY   eV

Derived optical constants

Comments

437-nm single layer on Si substrate. Prepared by room temperature reactive sputter deposition using Si target and 2.0 SCCM N2 flux at 300 W plasma power.
Data on the influence of deposition conditions on the optical properties of the film can be found in the original publication.
Data on the refractive index (n) in the visible can be found in the original publication.

References

J. Kischkat, S. Peters, B. Gruska, M. Semtsiv, M. Chashnikova, M. Klinkmüller, O. Fedosenko, S. Machulik, A. Aleksandrova, G. Monastyrskyi, Y. Flores, and W. T. Masselink. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride, Appl. Opt. 51, 6789-6798 (2012) (Numerical data kindly provided by Jan Kischkat)

Data

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INFO

Silicon nitride, Si3N4

Silicon nitride (Si3N4) is a synthetic, high-performance ceramic material known for its impressive mechanical properties even at elevated temperatures. It exhibits excellent thermal shock resistance, and its hardness makes it resistant to wear and abrasion. In the realm of electronics, it's utilized as an insulator and as a dielectric for advanced microelectronics applications due to its electrical properties. Owing to its resistance to oxidation and chemical corrosion, it's also used in challenging environments, such as in the manufacturing of ball bearings, turbine blades, and other engine components. Additionally, in the optical domain, silicon nitride is transparent in the infrared range and has been studied for potential uses in optoelectronic devices. Its combination of strength, temperature resistance, and electrical properties make it a sought-after material for various high-tech applications.

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