Optical constants of InP (Indium phosphide)
Pettit and Turner 1965: n 0.95–10 µm
Complex refractive index (n+ik)
Derived optical constants
1) G. D. Pettit and W. J. Turner. Refractive index of InP, J. Appl. Phys. 36, 2081 (1965)
2) A. N. Pikhtin and A. D. Yas’kov. Disperson of the refractive index of semiconductors with diamond and zinc-blende structures, Sov. Phys. Semicond. 12, 622-626 (1978) (as cited in Handbook of Optics, 2nd edition, Vol. 2. McGraw-Hill 1994)
3) Handbook of Optics, 2nd edition, Vol. 2. McGraw-Hill 1994
* Ref. 3 provides a Sellmeier equation based on data from Ref. 1 and Ref. 2.
Indium phosphide, InPIndium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, belonging to the III-V group of semiconductors. It offers a high electron mobility and a direct bandgap, making it especially useful for optoelectronic devices that operate in the infrared and visible spectra. InP is widely used as a substrate material for epitaxial growth of other III-V semiconductors, such as GaAs and InGaAs, and is essential for constructing high-speed transistors and photonic integrated circuits. The material is often grown using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). InP is particularly important in the fabrication of high-performance light-emitting diodes (LEDs), laser diodes, and waveguide-based photonic components. It's also a key material for fiber-optic communication systems. Handling InP requires caution due to the toxicity of its constituent elements.
- Indium(III) phosphide