Refractive index database

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Optical constants of InP (Indium phosphide)
Panah et al. 2016: n,k 5.0–30 µm

Wavelength: µm

Complex refractive index (n+ik)[ i ]

n   k   LogX   LogY   eV

Derived optical constants

Conditions & Spec sheet

n_is_absolute: true
wavelength_is_vacuum: true


Undoped indium phosphide (InP) substrate.


M. E. A. Panah, O. Takayama, S. V. Morozov, K. E. Kudryavtsev, E. S. Semenova, A. V. Lavrinenko. Highly doped InP as a low loss plasmonic material for mid-IR region, Opt. Express 24, 29077-29088 (2016) (Numerical data kindly provided by Osamu Takayama)


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Indium phosphide, InP

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, belonging to the III-V group of semiconductors. It offers a high electron mobility and a direct bandgap, making it especially useful for optoelectronic devices that operate in the infrared and visible spectra. InP is widely used as a substrate material for epitaxial growth of other III-V semiconductors, such as GaAs and InGaAs, and is essential for constructing high-speed transistors and photonic integrated circuits. The material is often grown using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). InP is particularly important in the fabrication of high-performance light-emitting diodes (LEDs), laser diodes, and waveguide-based photonic components. It's also a key material for fiber-optic communication systems. Handling InP requires caution due to the toxicity of its constituent elements.

Other name

  • Indium(III) phosphide

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