Optical constants of InP (Indium phosphide)
Adachi 1989: n,k 0.207–12.4 µm
Wavelength:
µm
(2.0664e-01–1.2398e+01)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
References
S. Adachi. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−y, J. Appl. Phys. 66, 6030-6040 (1989)
[Calculation script (Python)]
Data
INFO
Indium phosphide, InP
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, belonging to the III-V group of semiconductors. It offers a high electron mobility and a direct bandgap, making it especially useful for optoelectronic devices that operate in the infrared and visible spectra. InP is widely used as a substrate material for epitaxial growth of other III-V semiconductors, such as GaAs and InGaAs, and is essential for constructing high-speed transistors and photonic integrated circuits. The material is often grown using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). InP is particularly important in the fabrication of high-performance light-emitting diodes (LEDs), laser diodes, and waveguide-based photonic components. It's also a key material for fiber-optic communication systems. Handling InP requires caution due to the toxicity of its constituent elements.Other name
- Indium(III) phosphide