Optical constants of InAs (Indium arsenide)
Lorimor and Spitzer 1965: n 3.7–31.3 µm
Complex refractive index (n+ik)
n k LogX LogY eV
Derived optical constants
O. G. Lorimor and W. G. Spitzer. Infrared refractive index and absorption of InAs and CdTe, J. Appl. Phys. 36, 1841-1844 (1965)
Indium arsenide, InAsIndium arsenide (InAs) is a compound semiconductor material that belongs to the III-V group of semiconductors. It is known for its high electron mobility and narrow energy band gap, making it particularly useful in high-speed electronics and optoelectronics. InAs is a key material in the manufacture of infrared detectors, including those used for night-vision systems, and is also used in the fabrication of quantum dot structures. The material can be grown via techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD), and is often used in conjunction with other III-V semiconductor materials like GaAs or InP to form heterostructures or quantum wells. It has applications in photodetectors, high-frequency transistors, and other optoelectronic devices. Care should be exercised when working with InAs due to the toxicity of arsenic.
- Indium(III) arsenide