Optical constants of InAs (Indium arsenide)
Adachi 1989: n,k 0.207–12.4 µm
Wavelength:
µm
(2.0664e-01–1.2398e+01)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
References
S. Adachi. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−y, J. Appl. Phys. 66, 6030-6040 (1989)
[Calculation script (Python)]
Data
INFO
Indium arsenide, InAs
Indium arsenide (InAs) is a compound semiconductor material that belongs to the III-V group of semiconductors. It is known for its high electron mobility and narrow energy band gap, making it particularly useful in high-speed electronics and optoelectronics. InAs is a key material in the manufacture of infrared detectors, including those used for night-vision systems, and is also used in the fabrication of quantum dot structures. The material can be grown via techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD), and is often used in conjunction with other III-V semiconductor materials like GaAs or InP to form heterostructures or quantum wells. It has applications in photodetectors, high-frequency transistors, and other optoelectronic devices. Care should be exercised when working with InAs due to the toxicity of arsenic.Other name
- Indium(III) arsenide