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Optical constants of GaSb (Gallium antimonide)
Ferrini et al. 1998: n,k 0.207–2.48 µm

Wavelength: µm
 (0.207–2.480)  
 

Complex refractive index (n+ik)[ i ]


n   k   LogX   LogY   eV

Derived optical constants

Comments

AlxGa1−xSb, x = 0 (GaAs). Thin film grown by molecular beam epitaxy on a GaSb substrate.

References

R. Ferrini, M. Patrini, S. Franchi. Optical functions from 0.02 to 6 eV of AlxGa1−xSb/GaSb epitaxial layers. J. Appl Phys. 84, 4517-4524 (1998)

Data

[CSV - comma separated]   [TXT - tab separated]   [Full database record]

INFO

Gallium antimonide, GaSb

Gallium antimonide (GaSb) is a III-V compound semiconductor with a direct band gap of approximately 0.72 eV. It is well-suited for infrared (IR) applications, particularly in the mid- to long-wavelength IR range. Due to its narrow band gap, GaSb is often employed in optoelectronic devices like photodetectors, laser diodes, and infrared-emitting diodes. It also serves as a substrate for other III-V semiconductors like InAs and InSb, facilitating the creation of complex heterostructures with tailored electronic and optical properties. Gallium antimonide is known for its high electron mobility, making it appealing for high-speed electronic applications as well. Overall, GaSb is a versatile material with growing significance in advanced optoelectronic and electronic technologies.

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