Optical constants of GaAs (Gallium arsenide)
Perner et al. 2023: n 2.0–7.1 µm
Complex refractive index (n+ik)
Derived optical constants
Conditions & Spec sheet
n_is_absolute: true wavelength_is_vacuum: true temperature: 22 °C
Relative standard uncertainty ≤3.3×10-4 over whole range. Optical measurements at 2.21 mbar and 22 °C.
L. W. Perner, G.-W. Truong, D. Follman, M. Prinz, G. Winkler, S. Puchegger, G. D. Cole, O. H. Heckl. Simultaneous measurement of mid-infrared refractive indices in thin-film heterostructures: Methodology and results for GaAs/AlGaAs, Phys. Rev. Res. 5, 033048 (2023) (Data kindly provided by the authors)
Gallium arsenide, GaAsGallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.
- Gallium(III) arsenide