Refractive index database

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Optical constants of GaAs (Gallium arsenide)
Papatryfonos et al. 2021: n,k 0.260–1.88 µm

Wavelength: µm

Complex refractive index (n+ik)[ i ]

n   k   LogX   LogY   eV

Derived optical constants

Conditions & Spec sheet

n_is_absolute: true
wavelength_is_vacuum: true


K. Papatryfonos, T. Angelova, A. Brimont, B. Reid, S. Guldin, P. R. Smith, M. Tang, K. Li, A. J. Seeds, H. Liu, D. R. Selviah. Refractive indices of MBE-grown AlxGa1-xAs ternary alloys in the transparent wavelength region, AIP Adv. 11, 025327 (2021) (Numerical data kindly provided by Konstantinos Papatryfonos)


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Gallium arsenide, GaAs

Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.

Other name

  • Gallium(III) arsenide

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