Optical constants of GaAs (Gallium arsenide)
Kachare et al. 1976: n 1.4–11 µm
Wavelength:
µm
(1.4–11)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
Dispersion formula
$$n^2-1=2.5+\frac{7.4969λ^2}{λ^2-0.4082^2}+\frac{1.9347λ^2}{λ^2-37.17^2}$$Comments
Room temperature
References
A. H. Kachare, W. G. Spitzer, and J. E. Fredrickson. Refractive index of ion-implanted GaAs, J. Appl. Phys., 47, 4209-4212 (1976)
Data
INFO
Gallium arsenide, GaAs
Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.Other name
- Gallium(III) arsenide