Optical constants of GaAs (Gallium arsenide)
Jellison 1992: n,k 0.234–0.840 µm
Complex refractive index (n+ik)
Derived optical constants
Comments
Crysal orientation: <100>; Room temperature
References
G.E. Jellison Jr. Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry. Opt. Mat. 1, 151-160 (1992)
Data
Additional information
About Gallium arsenide
Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.
Other names and variations:- GaAs
- Gallium(III) arsenide