Optical constants of GaAs (Gallium arsenide)
Aspnes et al. 1986: n,k 0.207–0.827 µm
Complex refractive index (n+ik)
Derived optical constants
Comments
Crysal orientation: <100>; Doping: 1.7×1017 cm-3, n; Room temperature
References
D. E. Aspnes, S. M. Kelso, R. A. Logan, R. Bhat. Optical properties of AlxGa1−xAs. J. Appl. Phys. 60, 754-767 (1986)
Data
Additional information
About Gallium arsenide
Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.
Other names and variations:- GaAs
- Gallium(III) arsenide