Optical constants of GaAs (Gallium arsenide)
Aspnes et al. 1986: n,k 0.207–0.827 µm
Wavelength:
µm
(0.2066–0.8266)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
Comments
Crysal orientation: <100>; Doping: 1.7×1017 cm-3, n; Room temperature
References
D. E. Aspnes, S. M. Kelso, R. A. Logan and R. Bhat. Optical properties of AlxGa1−xAs, J. Appl. Phys. 60, 754-767 (1986)
Data
INFO
Gallium arsenide, GaAs
Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.Other name
- Gallium(III) arsenide