Optical constants of GaAs (Gallium arsenide)
Adachi 1989: n,k 0.207–12.4 µm
Wavelength:
µm
(2.0664e-01–1.2398e+01)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
References
S. Adachi. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−y, J. Appl. Phys. 66, 6030-6040 (1989)
[Calculation script (Python)]
Data
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Gallium arsenide, GaAs
Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.Other name
- Gallium(III) arsenide