Optical constants of Si:InP (Silicon-doped indium phosphide)
Panah et al. 2016: n,k 5.0–30 µm
Wavelength:
µm
(5.00–30.00)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
Conditions
film_thickness: 4.0E-7 substrate: InP
Comments
400 nm silicon-doped InP (Si:InP) layer on undoped InP substrate.
References
M. E. A. Panah, O. Takayama, S. V. Morozov, K. E. Kudryavtsev, E. S. Semenova, A. V. Lavrinenko. Highly doped InP as a low loss plasmonic material for mid-IR region. Opt. Express 24, 29077-29088 (2016) (Numerical data kindly provided by Osamu Takayama)
Data
Additional information
About Silicon-doped indium phosphide
Other names and variations:
- Si:InP