Optical constants of InP (Indium phosphide)
Pettit and Turner 1965: n 0.95–10 µm
Complex refractive index (n+ik)
Derived optical constants
Dispersion formula
$$n^2-1=6.255+\frac{2.316λ^2}{λ^2-0.6263^2}+\frac{2.765λ^2}{λ^2-32.935^2}$$Comments
Room temperature
References
- G. D. Pettit and W. J. Turner.
Refractive index of InP.
J. Appl. Phys. 36, 2081 (1965)
- A. N. Pikhtin and A. D. Yas’kov.
Disperson of the refractive index of semiconductors with diamond and zinc-blende structures,
Sov. Phys. Semicond. 12, 622-626 (1978) (as cited in Handbook of Optics, 2nd edition, Vol. 2. McGraw-Hill 1994)
- Handbook of Optics, 2nd edition, Vol. 2. McGraw-Hill 1994
- Ref. 3 provides a Sellmeier equation based on data from Ref. 1 and Ref. 2.
Data
Additional information
About Indium phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, belonging to the III-V group of semiconductors. It offers a high electron mobility and a direct bandgap, making it especially useful for optoelectronic devices that operate in the infrared and visible spectra. InP is widely used as a substrate material for epitaxial growth of other III-V semiconductors, such as GaAs and InGaAs, and is essential for constructing high-speed transistors and photonic integrated circuits. The material is often grown using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). InP is particularly important in the fabrication of high-performance light-emitting diodes (LEDs), laser diodes, and waveguide-based photonic components. It's also a key material for fiber-optic communication systems. Handling InP requires caution due to the toxicity of its constituent elements.
Other names and variations
- InP
- Indium(III) phosphide
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