Optical constants of InP (Indium phosphide)
Panah et al. 2016: n,k 5.0–30 µm
Complex refractive index (n+ik)
Derived optical constants
Comments
Undoped indium phosphide (InP) substrate.
References
M. E. A. Panah, O. Takayama, S. V. Morozov, K. E. Kudryavtsev, E. S. Semenova, A. V. Lavrinenko. Highly doped InP as a low loss plasmonic material for mid-IR region. Opt. Express 24, 29077-29088 (2016) (Numerical data kindly provided by Osamu Takayama)
Data
Additional information
About Indium phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, belonging to the III-V group of semiconductors. It offers a high electron mobility and a direct bandgap, making it especially useful for optoelectronic devices that operate in the infrared and visible spectra. InP is widely used as a substrate material for epitaxial growth of other III-V semiconductors, such as GaAs and InGaAs, and is essential for constructing high-speed transistors and photonic integrated circuits. The material is often grown using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). InP is particularly important in the fabrication of high-performance light-emitting diodes (LEDs), laser diodes, and waveguide-based photonic components. It's also a key material for fiber-optic communication systems. Handling InP requires caution due to the toxicity of its constituent elements.
Other names and variations:- InP
- Indium(III) phosphide