Optical constants of GaP-InP (Gallium indium phosphide, GaInP)
Ferrini et al. 2002: n,k 0.225–0.653 µm
Wavelength:
µm
(0.2254–0.6525)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
Conditions
substrate: GaAs film_thickness: 3.15E-6
Comments
Ga0.51In0.49P. Undoped lattice matched film grown lattice matched on GaAs substrates, by metal-organic vapour phase epitaxy (MOVPE) at 700 °C.
References
R. Ferrini, G. Guizzetti, M. Patrini, A. Parisini, L. Tarricone, B. Valenti. Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV. Eur. Phys. J. B 84, 449-458 (2002)