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Optical constants of GaP-InP (Gallium indium phosphide, GaInP)
Ferrini et al. 2002: n 0.689–24.8 µm

Wavelength: µm
 (0.689–24.8)  
 

Complex refractive index (n+ik)[ i ]


n   k   LogX   LogY   eV

Derived optical constants

Dispersion formula [ i ]

$$n^2-1=5.058+\frac{3.27λ^2}{λ^2-0.459^2}$$

Conditions

substrate: GaAs
film_thickness: 3.15E-6

Comments

Ga0.51In0.49P. Undoped lattice matched film grown lattice matched on GaAs substrates, by metal-organic vapour phase epitaxy (MOVPE) at 700 °C.

References

R. Ferrini, G. Guizzetti, M. Patrini, A. Parisini, L. Tarricone, B. Valenti. Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV. Eur. Phys. J. B 84, 449-458 (2002)

Data

[Expressions for n]   [CSV - comma separated]   [TXT - tab separated]   [Full database record]

Additional information

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