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Optical constants of AlAs-AlSb (Aluminium arsenide antimonide, AlAsSb)
Galander et al. 2026: n,k 1.00–3.10 µm; 8% As

Wavelength: µm
 (1–3.1)  
 

Complex refractive index (n+ik)[ i ]


n   k   LogX   LogY   eV

Derived optical constants

Dispersion formula [ i ]

$$n^2-1=\frac{1.7599λ^2}{λ^2-0.0453}+\frac{7.2487λ^2}{λ^2-0.0884}$$

Conditions

T: 293.45

Comments

MBE grown DBR, AlAs0.08Sb0.92. 20.3 °C.

References

U. Galander, N. Huwyler, M. Encheva, M. Golling, O. H. Heckl. The refractive index of gallium antimonide. Mat. Light 1 100067 (2026)

Data

[Expressions for n]   [CSV - comma separated]   [TXT - tab separated]   [Full database record]

Additional information

About Aluminium arsenide antimonide

AlAsSb (AlAs1-xSbx) is a ternary III-V semiconductor alloy composed of aluminium arsenide (AlAs) and aluminium antimonide (AlSb). It has a zinc blende crystal structure and an indirect bandgap that varies with composition. By adjusting the arsenic-to-antimony ratio, its lattice constant and electronic properties can be tailored for integration with other III-V semiconductors. AlAsSb is used in semiconductor heterostructures, particularly as a barrier material in infrared photodetectors, where it helps suppress dark current. It is also of interest for low-noise avalanche photodiodes and high-speed optical communication applications.

Other names and variations

  • AlAsSb
  • Aluminum arsenide antimonide

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