n2 Explorer: GaAs (Gallium arsenide)
Matteo et al. 2024; 220 fs
Matteo et al. 2024; 200 ps
Polyanskiy et al. 2024
Jansonas et al. 2022
Ensley and Bambha 2019
Hurlbut et al. 2007
Tatsuura et al. 2005
Sheik-Bahae et al. 1991
Details
Reference
Comments
Data
Conditions
Additional information
About Gallium arsenide
Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.
Other names and variations:- GaAs
- Gallium(III) arsenide