437-nm single layer on Si substrate. Prepared by room temperature reactive sputter deposition using Si target and 2.0 SCCM N2 flux at 300 W plasma power.
Data on the influence of deposition conditions on the optical properties of the film can be found in the original publication.
Data on the refractive index (n) in the visible can be found in the original publication.
J. Kischkat, S. Peters, B. Gruska, M. Semtsiv, M. Chashnikova, M. Klinkmüller, O. Fedosenko, S. Machulik, A. Aleksandrova, G. Monastyrskyi, Y. Flores, and W. T. Masselink. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride, Appl. Opt. 51, 6789-6798 (2012) (Numerical data kindly provided by Jan Kischkat)
Silicon nitride, Si3N4