Optical constants of InAs (Indium arsenide)
Aspnes and Studna 1983: n,k 0.21–0.83 µm
Wavelength:
µm
(0.2066–0.8266)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
Comments
Crysal orientation: <110>; Doping: 2.7×1016 cm-3, n; Room temperature
References
D. E. Aspnes and A. A. Studna. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV, Phys. Rev. B 27, 985-1009 (1983)
Data
INFO
Indium arsenide, InAs
Indium arsenide (InAs) is a compound semiconductor material that belongs to the III-V group of semiconductors. It is known for its high electron mobility and narrow energy band gap, making it particularly useful in high-speed electronics and optoelectronics. InAs is a key material in the manufacture of infrared detectors, including those used for night-vision systems, and is also used in the fabrication of quantum dot structures. The material can be grown via techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD), and is often used in conjunction with other III-V semiconductor materials like GaAs or InP to form heterostructures or quantum wells. It has applications in photodetectors, high-frequency transistors, and other optoelectronic devices. Care should be exercised when working with InAs due to the toxicity of arsenic.Other name
- Indium(III) arsenide