Optical constants of GaAs (Gallium arsenide)
Skauli et al. 2003: n 0.97–17 µm
Wavelength:
µm
(0.97–17)
Complex refractive index (n+ik)
n
k
LogX
LogY
eV
Derived optical constants
Dispersion formula
$$n^2-1=4.372514+\frac{5.466742λ^2}{λ^2-0.4431307^2}+\frac{0.02429960λ^2}{λ^2-0.8746453^2}+\frac{1.957522λ^2}{λ^2-36.9166^2}$$Comments
22 °C. See the original publication for temperature dependence of refractive index.
References
T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier. Improved dispersion relations for GaAs and applications to nonlinear optics, J. Appl. Phys., 94, 6447-6455 (2003)
Data
INFO
Gallium arsenide, GaAs
Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.Other name
- Gallium(III) arsenide